Spontaneously forming 30-150Å Defects at the Si/oxide interface
نویسنده
چکیده
A previously perforated planar TEM specimen of silicon sample (8GLJH-060) was ion milled for 10s using two argon guns at an angle of 20°, 0.5mA per gun and a fixed voltage of 4kV. The time the specimen surface was in contact with air was minimized to 3min, by taking it out of the ion mill and putting it in the electron microscope airlock immediately afterwards. The silicon wafer was left in the vacuum of the microscope for ~14 hours and afterwards exposed to air for two hours, with another two hours pumping down afterwards.
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